Gold Rush Fever in Business Cycles

Gold rushes are periods of economic boom, generally associated with large increases in expenditures aimed at securing claims near new found veins of gold. An interesting aspect of gold rushes is that, from a social point of view, much of the increased activity is wasteful since it contributes simply to the expansion of the stock of money. In this paper, we explore whether business cycle fluctuations may sometimes be driven by a phenomenon akin to a gold rush. In particular, we present a model where the opening of new market opportunities causes an economic expansion by favoring competition for market share, which is essentially a dissolution of rents. We call such an episode a market rush. We construct a simple model of a market rush that can be embedded into an otherwise standard Dynamic General Equilibrium model, and show how market rushes can help explain important features of the data. We use a simulated-moment estimator to quantify the role of market rushes in fluctuations. We find that market rushes may account for over half the short run volatility in hours worked and a third of the short run volatility of output.

Orthogonal STBC MC-CDMA system with channel estimation over realistic high mobility MIMO channels

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Performance of STBC MC-CDMA systems over outdoor realistic MIMO channels

The paper deals with orthogonal space-time block coded MC-CDMA systems in outdoor realistic downlink scenarios with up to two transmit and receive antennas. Assuming no channel state information at the transmitter, we compare several linear single-user detection and spreading schemes, with or without channel coding, achieving a spectral efficiency of 1-2 bits/s/Hz. The different results obtained demonstrate that spatial diversity significantly improves the performance of MC-CDMA systems, and allows different chip-mapping without notably decreasing performance. Moreover, the global system exhibits a good trade-off between complexity at mobile stations and performance. Then, Alamouti's STBC MC-CDMA schemes derive full benefit from the frequency and spatial diversities and can be considered as a very realistic and promising candidate for the air interface downlink of the 4/sup th/ generation mobile radio systems

Effect of the Nd content on the structural and photoluminescence properties of silicon-rich silicon dioxide thin films

In this article, the microstructure and photoluminescence (PL) properties of Nd-doped silicon-rich silicon oxide (SRSO) are reported as a function of the annealing temperature and the Nd concentration. The thin films, which were grown on Si substrates by reactive magnetron co-sputtering, contain the same Si excess as determined by Rutherford backscattering spectrometry. Fourier transform infrared (FTIR) spectra show that a phase separation occurs during the annealing because of the condensation of the Si excess resulting in the formation of silicon nanoparticles (Si-np) as detected by high-resolution transmission electron microscopy and X-ray diffraction (XRD) measurements. Under non-resonant excitation at 488 nm, our Nd-doped SRSO films simultaneously exhibited PL from Si-np and Nd3+ demonstrating the efficient energy transfer between Si-np and Nd3+ and the sensitizing effect of Si-np. Upon increasing the Nd concentration from 0.08 to 4.9 at.%, our samples revealed a progressive quenching of the Nd3+ PL which can be correlated with the concomitant increase of disorder within the host matrix as shown by FTIR experiments. Moreover, the presence of Nd-oxide nanocrystals in the highest Nd-doped sample was established by XRD. It is, therefore, suggested that the Nd clustering, as well as disorder, are responsible for the concentration quenching of the PL of Nd3+

Undoped and Nd3+ doped Si-based single layers and superlattices for photonic applications

International audienceThis work presents the benefits of the superlattice approach to control light emission properties of materials with Si nanoclusters and rare‐earth ions. The undoped and Nd3+‐doped both Si‐rich‐SiO2 single layers and Si‐rich‐SiO2/SiO2 superlattices were grown by radio frequency magnetron sputtering. Their properties were investigated by means of spectroscopic ellipsometry, Fourier infrared transmission spectroscopy, transmission electron microscopy, and photoluminescence (PL) methods versus deposition conditions, annealing treatment, and superlattice design (doping and thickness of alternated sublayers). An intense Nd3+ emission from as‐deposited single layers and superlattices was observed. The lower annealing temperature (below 900 °C) of the single layers and superlattices favors the formation of amorphous Si clusters that act as effective sensitizers of rare‐earth ions. The highest Nd3+ PL intensity was achieved after a conventional annealing at about 600–800 °C in nitrogen flow for all samples. Crystallized Si‐nanoclusters were formed in Si‐rich‐SiO2 single layers upon annealing at 1000–1100 °C, whereas their formation in the superlattices occurred at higher temperatures (1100–1150 °C). The mechanism of Nd ions' excitation via energy transfer from Si‐nanoclusters and/or matrix defects, if any, is discussed

STBC MC-CDMA systems for indoor and outdoor scenarios

We compare the performance of Alamouti's space-time block coded MC-CDMA systems for indoor and outdoor realistic scenarios with zero forcing or minimum mean square error detection schemes. Two different configurations of the system are considered for the two scenarios. The different results obtained as well for indoor as for outdoor scenarios demonstrate that spatial diversity improves significantly the performance of MC-CDMA systems. Then, Alamouti's STBC MC-CDMA schemes derive full benefit from the frequency and spatial diversities and can be considered as a very realistic and promising candidate for the air interface downlink of the 4th generation mobile radio systems

Structural and optical characterization of pure Si-rich nitride thin films

International audienceThe specific dependence of the Si content on the structural and optical properties of O-and H-free Si-rich nitride (SiN x>1.33) thin films deposited by magnetron sputtering is investigated. A semiempirical relation between the composition and the refractive index was found. In the absence of Si-H, N-H, and Si-O vibration modes in the FTIR spectra, the transverse and longitudinal optical (TO-LO) SiN stretching pair modes could be unambiguously identified using the Berreman effect. With increasing Si content, the LO and the TO bands shifted to lower wavenumbers, and the LO band intensity dropped suggesting that the films became more disordered. Besides, the LO and the TO bands shifted to higher wavenumbers with increasing annealing temperature which may result from the phase separation between Si nanoparticles (Si-np) and the host medium. Indeed, XRD and Raman measurements showed that crystalline Si-np formed upon 1100°C annealing but only for SiN x0.9 , demonstrating that this PL is not originating from confined states in crystalline Si-np. As an additional proof, the PL was quenched while crystalline Si-np could be formed by laser annealing. Besides, the PL cannot be explained neither by defect states in the bandgap nor by tail to tail recombination. The PL properties of SiN x>0.9 could be then due to a size effect of Si-np but having an amorphous phase

Microstructure and optical properties of Pr3+-doped hafnium silicate films

International audienceIn this study, we report on the evolution of the microstructure and photoluminescence properties of Pr 3+-doped hafnium silicate thin films as a function of annealing temperature (T A). The composition and microstructure of the films were characterized by means of Rutherford backscattering spectrometry, spectroscopic ellipsometry, Fourier transform infrared absorption, and X-ray diffraction, while the emission properties have been studied by means of photoluminescence (PL) and PL excitation (PLE) spectroscopies. It was observed that a post-annealing treatment favors the phase separation in hafnium silicate matrix being more evident at 950°C. The HfO 2 phase demonstrates a pronounced crystallization in tetragonal phase upon 950°C annealing. Pr 3+ emission appeared at T A = 950°C, and the highest efficiency of Pr 3+ ion emission was detected upon a thermal treatment at 1,000°C. Analysis of the PLE spectra reveals an efficient energy transfer from matrix defects towards Pr 3+ ions. It is considered that oxygen vacancies act as effective Pr 3+ sensitizer. Finally, a PL study of undoped HfO 2 and HfSiO x matrices is performed to evidence the energy transfer

Atomic scale observation of phase separation and formation of silicon clusters in Hf higk-κ silicates

International audienceHafnium silicate films were fabricated by RF reactive magnetron sputtering technique. Fine microstructural analyses of the films were performed by means of high-resolution transmission electron microscopy and atom probe tomography. A thermal treatment of as-grown homogeneous films leads to a phase separation process. The formation of SiO2 and HfO2 phases as well as pure Si one was revealed. This latter was found to be amorphous Si nanoclusters, distributed uniformly in the film volume. Their mean diameter and density were estimated to be about 2.8 nm and (2.960.4) 1017 Si-ncs/cm3, respectively. The mechanism of the decomposition process was proposed. The obtained results pave the way for future microelectronic and photonic applications of Hf-based high-j dielectrics with embedded Si nanocluster